Диск SSD Samsung 850 EVO Series, 120 GB 3D V-NAND Flash, 2.5' Slim, SATA 6Gb

След като SSD 850 Pro, идва време за представянето и на неговият по-евтин вариант – 850 EVO. Новият ценово ориентиран вариант за SSD на корейският производител ще разчита на TLC 3D V-NAND Flash. Използването на иновативните 3D клетки позволява на Samsung да постигне много по-висока плътност, което е едно от предимствата на SSD 850 EVO серията на компанията.

Спецификация

Capacity
120GB, 250GB, 500GB, 1TB(1,000GB)

Dimension (W x H x D)
100 x 69.85 x 6.8 (mm)

Interface
SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)

Form factor
2.5 inch

Controller 120/250/500GB : Samsung MGX controller
1TB: Samsung MEX controller

NAND Flash Memory
Samsung 32 layer 3D V-NAND

DRAM Cache Memory
256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2

Performance*
Sequential Read Max. 540 MB/s
Sequential Write** Max. 520 MB/s
4KB Random Read (QD1) Max. 10,000 IOPS
4KB Random Write (QD1) Max. 40,000 IOPS
4KB Random Read (QD32) Max. 98,000 IOPS(500GB/1TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
4KB Random Write (QD32) Max. 90,000 IOPS(500GB/1TB)
Max. 88,000 IOPS(120GB/250GB)

Data Security
AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)

Weight
Max. 66g (1TB)

Reliability
MTBF: 1.5 million hours

TBW
120/250GB: 75TBW
500GB/1TB: 150 TBW

Power Consumption***
Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)

Supporting features
TRIM(Required OS support), Garbage Collection, S.M.A.R.T.

Temperature
Operating: 0°C to 70°C
Non-Operating: -40°C to 85°C

Humidity
5% to 95%, non-condensing

Vibration
Non-Operating: 20~2000Hz, 20G

Shock
Non-Operating: 1500G, duration 0.5m sec, 3 axis